View IRF530NS_8132217.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

IRF530NSpbf irf530nlpbf hexfet ? power mosfet parameter typ. max. units r jc junction-to-case ??? 2.15 r ja junction-to-ambient (pcb mounted,steady-state)** ??? 40 thermal resistance www.irf.com 1 v dss = 100v r ds(on) = 90m ? i d = 17a s d g advanced hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irf530nl) is available for low-profile applications. advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated lead-free description absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 17 i d @ t c = 100c continuous drain current, v gs @ 10v 12 a i dm pulsed drain current 60 p d @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 70 w linear derating factor 0.47 w/c v gs gate-to-source voltage 20 v i ar avalanche current 9.0 a e ar repetitive avalanche energy 7.0 mj dv/dt peak diode recovery dv/dt 7.4 v/ns t j operating junction and -55 to + 175 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case ) d 2 pak IRF530NSpbf to-262 irf530nlpbf c/w pd - 95100

2 www.irf.com s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source curre nt integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 9.0a, v gs = 0v t rr reverse recovery time ??? 93 140 ns t j = 25c, i f = 9.0a q rr reverse recovery charge ??? 320 480 nc di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 17 60 repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) starting t j = 25c, l = 2.3mh r g = 25 ? , i as = 9.0a, v gs =10v (see figure 12) i sd 9.0a di/d 410a/s, v dd v (br)dss , t j 175c pulse width 400s; duty cycle 2%. this is a typical value at device destruction and represents operation outside rated limits. this is a calculated value limited to t j = 175c . uses irf530n data and test conditions. **when mounted on 1" square pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994 parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.11 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 90 m ? v gs = 10v, i d = 9.0a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 12 ??? ??? s v ds = 50v, i d = 9.0a ??? ??? 25 a v ds = 100v, v gs = 0v ??? ??? 250 v ds = 80v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 37 i d = 9.0a q gs gate-to-source charge ??? ??? 7.2 nc v ds = 80v q gd gate-to-drain ("miller") charge ??? ??? 11 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time ??? 9.2 ??? v dd = 50v t r rise time ??? 22 ??? i d = 9.0a t d(off) turn-off delay time ??? 35 ??? r g = 12 ? t f fall time ??? 25 ??? v gs = 10v, see fig. 10 between lead, ??? ??? 6mm (0.25in.) from package and center of die contact c iss input capacitance ??? 920 ??? v gs = 0v c oss output capacitance ??? 130 ??? v ds = 25v c rss reverse transfer capacitance ??? 19 ??? pf ? = 1.0mhz, see fig. 5 e as single pulse avalanche energy ??? 340 93 mj i as = 9.0a, l = 2.3mh nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? s d g i gss ns

i dss drain-to-source leakage current

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 1 10 100 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 4.0 5.0 6.0 7.0 8.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 15a

4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 400 800 1200 1600 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 9.0a v = 20v ds v = 50v ds v = 80v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 175 0 4 8 12 16 20 t , case temperature ( c) i , drain current (a) c d v ds 90% 10% v gs t d(on) t r t d(off) t f
1 0.1 %

+ -

6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -

t p v (br)dss i as ! " #$ 25 50 75 100 125 150 175 0 40 80 120 160 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 3.7a 6.4a 9.0a r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs

www.irf.com 7
p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ?

!"#
% $"" % $#" "# ? %&' ? () ? %&%*+ $ #,- % #)" ,

,)!$. &' %%% /
,%+"% ""# for n-channel hexfet ? power mosfets

8 www.irf.com n ote: "p " in as s embly line pos ition indicates "l ead-f ree" f530s t h is is an ir f 530s wit h lot code 8024 as s e mb le d on ww 02, 2000 in the assembly line "l" as s e mb l y lot code in t e r n at ional r e ct if ie r logo part number dat e code ye ar 0 = 2000 we ek 02 line l f 530s a = assembly site code week 02 p = des ignate s lead-free product (optional) rectifier in t e r n at ion al logo lot code as s e mb l y ye ar 0 = 2000 date code part number

dimensions are shown in millimeters (inches)

www.irf.com 9 as s e mb l y lot code rectifier int ernat ional as s e mb le d on ww 19, 1997 note: "p" in as s embly line pos ition indicates "l ead-f ree" in the assembly line "c" logo t his is an irl3103l lot code 1789 e xamp l e : line c dat e code week 19 year 7 = 1997 part number part number logo lot code assembly int ernat ional rect ifier product (optional) p = des ignat es lead-f ree a = assembly site code we e k 19 ye ar 7 = 1997 dat e code or to-262 part marking information to-262 package outline igbt 1- gate 2- collector 3- emitter

10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 03/04 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. d 2 pak tape & reel infomation dimensions are shown in millimeters (inches)
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

▲Up To Search▲

Price & Availability of IRF530NS

	To Download IRF530NS Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .